|標題:||Highly textured ZnO:B films grown by low pressure chemical vapor deposition for efficiency enhancement of heterojunction silicon-based solar cells|
Department of Photonics
|關鍵字:||ZnO:B;Heterojunction solar cell;Low-pressure chemical-vapor-deposition|
|摘要:||This paper demonstrates the growth of highly-textured boron-doped ZnO (ZnO:B) film by using low-pressure chemical-vapor-deposition (LPCVD) for efficient light harvesting and carrier collection in heterojunction silicon-based (HJS) solar cells. The optical and electrical characteristics have been optimized versus the substrate temperature and B2H6 flow rate for tradeoffs among the sheet resistance, free-carrier absorption, and optical transmission of blue/green wavelengths. A HJS solar cell with a 1.6-mu m-thick ZnO:B film achieves a high power conversion efficiency of 16.30% and fill factor of 78.05%, compared to 15.64% and 72.17%, respectively, from a counterpart with a conventional 80-nm-thick indium tin oxide layer. (C) 2013 Taiwan Institute of Chemical Engineers. Published by Elsevier B.V. All rights reserved.|
|期刊:||JOURNAL OF THE TAIWAN INSTITUTE OF CHEMICAL ENGINEERS|
|Appears in Collections:||Articles|
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