標題: Room-temperature-operated sensitive hybrid gas sensor based on amorphous indium gallium zinc oxide thin-film transistors
作者: Zan, Hsiao-Wen
Li, Chang-Hung
Yeh, Chun-Cheng
Dai, Ming-Zhi
Meng, Hsin-Fei
Tsai, Chuang-Chuang
物理研究所
光電工程學系
Institute of Physics
Department of Photonics
公開日期: 20-Jun-2011
摘要: An organic sensing layer is capped onto an amorphous indium gallium zinc oxide (a-IGZO) thin-film transistor (TFT) to form a hybrid sensor. The organic layer, served as a second gate, forms a p-n junction with the a-IGZO film. Oxidizing or reducing vapor molecules act like electron acceptors or electron donors to change the potential of the organic layer and the current of a-IGZO TFT. A sensitive and reversible response to 100 ppb ammonia and 100 ppb acetone is obtained at room temperature. This letter opens a route to develop low-cost large-area bio/chemical sensor arrays based on the emerging a-IGZO TFT technology. (C) 2011 American Institute of Physics. [doi:10.1063/1.3601488]
URI: http://dx.doi.org/10.1063/1.3601488
http://hdl.handle.net/11536/22529
ISSN: 0003-6951
DOI: 10.1063/1.3601488
期刊: APPLIED PHYSICS LETTERS
Volume: 98
Issue: 25
結束頁: 
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