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dc.contributor.authorZhan, Runzeen_US
dc.contributor.authorDong, Chengyuanen_US
dc.contributor.authorYang, Bo-Ruen_US
dc.contributor.authorShieh, Han-Ping D.en_US
dc.date.accessioned2014-12-08T15:31:53Z-
dc.date.available2014-12-08T15:31:53Z-
dc.date.issued2013-09-01en_US
dc.identifier.issn0021-4922en_US
dc.identifier.urihttp://dx.doi.org/10.7567/JJAP.52.090205en_US
dc.identifier.urihttp://hdl.handle.net/11536/22521-
dc.description.abstractA high-performance amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) was achieved using a double stacked channel layer (DSCL). An oxygen-poor IGZO film was deposited in pure argon ambient as a buffer layer to prevent oxygen plasma bombardment and improve device performance. An oxygen-rich IGZO film was then deposited on top of that buffer layer to modulate device stability. With this structure, an interface with low oxygen-plasma-induced damage and few oxygen vacancies in the bulk was achieved using DSCL, leading to a higher stability of the threshold voltage. (C) 2013 The Japan Society of Applied Physicsen_US
dc.language.isoen_USen_US
dc.titleModulation of Interface and Bulk States in Amorphous InGaZnO Thin-Film Transistors with Double Stacked Channel Layersen_US
dc.typeArticleen_US
dc.identifier.doi10.7567/JJAP.52.090205en_US
dc.identifier.journalJAPANESE JOURNAL OF APPLIED PHYSICSen_US
dc.citation.volume52en_US
dc.citation.issue9en_US
dc.citation.epageen_US
dc.contributor.department光電工程學系zh_TW
dc.contributor.department顯示科技研究所zh_TW
dc.contributor.departmentDepartment of Photonicsen_US
dc.contributor.departmentInstitute of Displayen_US
dc.identifier.wosnumberWOS:000323884300006-
dc.citation.woscount1-
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