標題: Modulation of Interface and Bulk States in Amorphous InGaZnO Thin-Film Transistors with Double Stacked Channel Layers
作者: Zhan, Runze
Dong, Chengyuan
Yang, Bo-Ru
Shieh, Han-Ping D.
光電工程學系
顯示科技研究所
Department of Photonics
Institute of Display
公開日期: 1-Sep-2013
摘要: A high-performance amorphous InGaZnO (a-IGZO) thin-film transistor (TFT) was achieved using a double stacked channel layer (DSCL). An oxygen-poor IGZO film was deposited in pure argon ambient as a buffer layer to prevent oxygen plasma bombardment and improve device performance. An oxygen-rich IGZO film was then deposited on top of that buffer layer to modulate device stability. With this structure, an interface with low oxygen-plasma-induced damage and few oxygen vacancies in the bulk was achieved using DSCL, leading to a higher stability of the threshold voltage. (C) 2013 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/JJAP.52.090205
http://hdl.handle.net/11536/22521
ISSN: 0021-4922
DOI: 10.7567/JJAP.52.090205
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 52
Issue: 9
結束頁: 
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