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dc.contributor.authorLuo, C. W.en_US
dc.contributor.authorChen, H. -J.en_US
dc.contributor.authorWang, H. J.en_US
dc.contributor.authorKu, S. A.en_US
dc.contributor.authorWu, K. H.en_US
dc.contributor.authorUen, T. M.en_US
dc.contributor.authorJuang, J. Y.en_US
dc.contributor.authorLin, J. -Y.en_US
dc.contributor.authorYoung, B. L.en_US
dc.contributor.authorKobayashi, T.en_US
dc.contributor.authorSankar, R.en_US
dc.contributor.authorChou, F. C.en_US
dc.contributor.authorBerger, H.en_US
dc.contributor.authorGu, G. D.en_US
dc.date.accessioned2014-12-08T15:31:51Z-
dc.date.available2014-12-08T15:31:51Z-
dc.date.issued2013en_US
dc.identifier.isbn978-0-8194-9392-7en_US
dc.identifier.issn0277-786Xen_US
dc.identifier.urihttp://hdl.handle.net/11536/22495-
dc.identifier.urihttp://dx.doi.org/10.1117/12.2001954en_US
dc.description.abstractUltrafast dynamics of carriers and phonons in topological insulators CuxBi2Se3-y (x= 0, 0.1, 0.125, y= 0, 1) was studied using femtosecond optical pump-probe spectroscopy. One damped oscillation was clearly observed in the transient reflectivity changes (Delta R/R), which is assigned to the coherent optical phonon (A(1g)(1)). According to the red shift of A(1g)(1) phonon frequency, the Cu atoms in CuxBi2Se3 crystals may predominantly intercalated between pair of the quintuple layers. Moreover, the carrier dynamics in the Dirac-cone surface state is significantly different from that in bulk state, which was investigated using optical pump mid-infrared (mid-IR) probe spectroscopy. The rising time and decay time of the negative component in Delta R/R, which is assigned to carrier relaxation in Dirac cone, is 1.62 ps and 20.5 ps, respectively.en_US
dc.language.isoen_USen_US
dc.subjectUltrafast dynamicsen_US
dc.subjecttopological insulatorsen_US
dc.subjectpump-probe spectroscopyen_US
dc.titleUltrafast dynamics in topological insulatorsen_US
dc.typeProceedings Paperen_US
dc.identifier.doi10.1117/12.2001954en_US
dc.identifier.journalULTRAFAST PHENOMENA AND NANOPHOTONICS XVIIen_US
dc.citation.volume8623en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000322829300009-
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