標題: Long-wavelength electroluminescence of InGaAs-capped type-II GaSb/GaAs quantum-rings at room temperature
作者: Lin, Wei-Hsun
Wang, Kai-Wei
Lin, Shih-Yen
Wu, Meng-Chyi
光電學院
光電工程學系
College of Photonics
Department of Photonics
關鍵字: Nanostructures;Antimonides;Molecular beam epitaxy;Semiconducting III-V materials
公開日期: 1-Sep-2013
摘要: The room-temperature photoluminescence (PL) and electroluminescence (EL) exceeding 1.3 mu m are observed for InGaAs-capped GaSb quantum-ring (QR) structures. With increasing In composition, the emission wavelength would shift from 1.18 to 131 mu m. The InGaAs-capped GaSb QRs also exhibit a higher injection current and stronger EL intensity at the same applied voltage. With the observation of low-temperature PL spectra, the transition mechanisms of the standard and InGaAs-capped QRs are further investigated. (c) 2012 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jcrysgro.2012.12.066
http://hdl.handle.net/11536/22480
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2012.12.066
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 378
Issue: 
起始頁: 571
結束頁: 575
Appears in Collections:Conferences Paper


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