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dc.contributor.authorLin, Wei-Hsunen_US
dc.contributor.authorWang, Kai-Weien_US
dc.contributor.authorLin, Shih-Yenen_US
dc.contributor.authorWu, Meng-Chyien_US
dc.date.accessioned2014-12-08T15:31:47Z-
dc.date.available2014-12-08T15:31:47Z-
dc.date.issued2013-09-01en_US
dc.identifier.issn0022-0248en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jcrysgro.2012.12.069en_US
dc.identifier.urihttp://hdl.handle.net/11536/22478-
dc.description.abstractTemperature-dependent photoluminescence (PL) and the corresponding carrier dynamics of standard and coupled type-II GaSb/GaAs quantum rings (QRs) are investigated in this article. Compared with standard QRs, the slower PL intensity decay of coupled QRs with increasing temperature is attributed to the depression of thermal quenching. More intense PL intensity is also observed for the coupled-QR sample at room temperature. With further reducing the GaAs spacer layer thickness to 2 nm, near two-times PL enhancement is observed. The results indicate that with the enhanced luminescence intensity of coupled-QR structure, type-II nano-structures may be utilized for light-emitting device applications. (c) 2013 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectNanostructuresen_US
dc.subjectMolecular beam epitaxyen_US
dc.subjectAntimonidesen_US
dc.subjectSemiconducting III-V materialsen_US
dc.titleTemperature-dependent photoluminescence and carrier dynamics of standard and coupled type-II GaSb/GaAs quantum ringsen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.jcrysgro.2012.12.069en_US
dc.identifier.journalJOURNAL OF CRYSTAL GROWTHen_US
dc.citation.volume378en_US
dc.citation.issueen_US
dc.citation.spage426en_US
dc.citation.epage429en_US
dc.contributor.department光電學院zh_TW
dc.contributor.department光電工程學系zh_TW
dc.contributor.departmentCollege of Photonicsen_US
dc.contributor.departmentDepartment of Photonicsen_US
dc.identifier.wosnumberWOS:000323355900106-
Appears in Collections:Conferences Paper