標題: Temperature-dependent photoluminescence and carrier dynamics of standard and coupled type-II GaSb/GaAs quantum rings
作者: Lin, Wei-Hsun
Wang, Kai-Wei
Lin, Shih-Yen
Wu, Meng-Chyi
光電學院
光電工程學系
College of Photonics
Department of Photonics
關鍵字: Nanostructures;Molecular beam epitaxy;Antimonides;Semiconducting III-V materials
公開日期: 1-Sep-2013
摘要: Temperature-dependent photoluminescence (PL) and the corresponding carrier dynamics of standard and coupled type-II GaSb/GaAs quantum rings (QRs) are investigated in this article. Compared with standard QRs, the slower PL intensity decay of coupled QRs with increasing temperature is attributed to the depression of thermal quenching. More intense PL intensity is also observed for the coupled-QR sample at room temperature. With further reducing the GaAs spacer layer thickness to 2 nm, near two-times PL enhancement is observed. The results indicate that with the enhanced luminescence intensity of coupled-QR structure, type-II nano-structures may be utilized for light-emitting device applications. (c) 2013 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jcrysgro.2012.12.069
http://hdl.handle.net/11536/22478
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2012.12.069
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 378
Issue: 
起始頁: 426
結束頁: 429
Appears in Collections:Conferences Paper


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