標題: Graphene films grown at low substrate temperature and the growth model by using MBE technique
作者: Lin, Meng-Yu
Guo, Wei-Ching
Wu, Meng-Hsun
Wang, Pro-Yao
Lee, Si-Chen
Lin, Shih-Yen
光電學院
College of Photonics
關鍵字: Crystal structure;Growth models;Molecular beam epitaxy;Elemental solids
公開日期: 1-Sep-2013
摘要: By depositing atomic C atoms on the grained Cu foil by using molecular beam epitaxy technique (MBE), high-quality graphene is obtained at low substrate temperature 300 degrees C. A model of initial graphene flake formation as crystal seeds and following lateral graphene growth is established to explain the growth mechanisms. After atomic C atom deposition, no significant difference is observed before and after MBE growth. The results suggest that the deposition of atomic C atoms will not improve the crystalline quality of pre-formed C films. The low substrate temperature required would be advantageous for the practical application of graphene. (c) 2013 Elsevier B.V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.jcrysgro.2012.12.068
http://hdl.handle.net/11536/22477
ISSN: 0022-0248
DOI: 10.1016/j.jcrysgro.2012.12.068
期刊: JOURNAL OF CRYSTAL GROWTH
Volume: 378
Issue: 
起始頁: 333
結束頁: 336
Appears in Collections:Conferences Paper


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