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dc.contributor.authorChien, K. F.en_US
dc.contributor.authorYang, Y. L.en_US
dc.contributor.authorTzou, A. J.en_US
dc.contributor.authorChou, W. C.en_US
dc.date.accessioned2014-12-08T15:31:46Z-
dc.date.available2014-12-08T15:31:46Z-
dc.date.issued2013-09-01en_US
dc.identifier.issn0022-0248en_US
dc.identifier.urihttp://dx.doi.org/10.1016/j.jcrysgro.2012.11.052en_US
dc.identifier.urihttp://hdl.handle.net/11536/22474-
dc.description.abstractZn(1-x)Mn(x)0 (x=0-0.061) thin films were grown by molecular beam epitaxy (MBE) system. Transmittance shows an increase of the band gap with the increasing Mn concentration. Resonant Raman scattering (RRS) spectra showed 11 longitudinal optical phonon lines for the Zn1-xMnxO samples. For the Zn0.997Mn0.003O sample, circular polarization degree of 9% was observed at magnetic field B=5 T. The dependence of circular polarization rate on the magnetic field intensity exhibits Brillouin type para-magnetism. (c) 2012 Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USen_US
dc.subjectMolecular beam epitaxyen_US
dc.subjectOxidesen_US
dc.subjectZinc compoundsen_US
dc.subjectMagen_US
dc.subjectneto-optic materialsen_US
dc.subjectSemiconducting II-VI materialsen_US
dc.titleOptical properties of Zn1-xMnxO thin films grown by molecular beam epitaxyen_US
dc.typeArticle; Proceedings Paperen_US
dc.identifier.doi10.1016/j.jcrysgro.2012.11.052en_US
dc.identifier.journalJOURNAL OF CRYSTAL GROWTHen_US
dc.citation.volume378en_US
dc.citation.issueen_US
dc.citation.spage218en_US
dc.citation.epage221en_US
dc.contributor.department電子物理學系zh_TW
dc.contributor.departmentDepartment of Electrophysicsen_US
dc.identifier.wosnumberWOS:000323355900056-
Appears in Collections:Conferences Paper


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