標題: Role of Oxygen in Amorphous In-Ga-Zn-O Thin Film Transistor for Ambient Stability
作者: Fuh, Chur-Shyang
Liu, Po-Tsun
Chou, Yi-Teh
Teng, Li-Feng
Sze, S. M.
電子工程學系及電子研究所
光電工程學系
顯示科技研究所
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Institute of Display
公開日期: 2013
摘要: The role of oxygen in amorphous InGaZnO thin film transistor (a-IGZO TFT) is studied for the device ambient stability. The threshold voltage (Vth) value of 350 degrees C annealed a-IGZO TFT decreased apparently with the staying duration, and the average value shifted from 10.2 V to 5.8 V after a 9-day staying at the atmosphere. After raising the annealing temperature to 450 degrees C, the electrical stability issue was improved significantly with superior electrical parameters, including low threshold voltage (V-th), low subthreshold swing, high carrier mobility and a small V-th variation of +/- 0.5 V. It can be attributed to the enhancement of bonding energy of oxygen in the thermally-annealed a-IGZO film with the increase of thermal annealing temperatures. Besides, the stronger oxygen bonding could also suppress the absorption/desorption and UV-induced migration at the back surface, causing better electrical reliability and immunity against UV radiation, respectively. All these results showed the ambient stability is greatly related to the oxygen in a-IGZO film, and the desired electrical characteristic can be achieved via the optimization of thermal annealing process. (C) 2012 The Electrochemical Society. All rights reserved.
URI: http://hdl.handle.net/11536/22461
http://dx.doi.org/10.1149/2.012301jss
ISSN: 2162-8769
DOI: 10.1149/2.012301jss
期刊: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
Volume: 2
Issue: 1
起始頁: Q1
結束頁: Q5
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