標題: Dependence of Light-Accelerated Instability on Bias and Environment in Amorphous Indium-Gallium-Zinc-Oxide Thin Film Transistors
作者: Chen, Yu-Chun
Chang, Ting-Chang
Li, Hung-Wei
Chung, Wan-Fang
Hsieh, Tien-Yu
Chen, Yi-Hsien
Tsai, Wu-Wei
Chiang, Wen-Jen
Yan, Jing-Yi
光電工程學系
Department of Photonics
公開日期: 2013
摘要: This study examines the dependence of light-accelerated instability on bias and environment in amorphous indium-gallium-zinc-oxide thin film transistors. When device is in vacuum ambient, the threshold voltage of device after negative gate bias illumination stress (NBIS) showed bias-dependent electrical degradation behavior. However, experimental results show the degradation of electrical characteristic in a-IGZO devices does not only rely on the charge trapping mechanism for NBIS. During NBIS in oxygen, moisture-simulated and atmosphere ambient, the negative shift in electrical characteristic is suppressed when compared to that in vacuum. This implies that the adsorbent gas species in the surrounding environment dominates the electrical characteristic degradation of devices during NBIS, which leading the change of dominant mechanism from photon-created carrier trapping to adsorbed/desorbed gas phenomenon. (C) 2013 The Electrochemical Society. All rights reserved.
URI: http://hdl.handle.net/11536/22460
http://dx.doi.org/10.1149/2.028304jss
ISSN: 2162-8769
DOI: 10.1149/2.028304jss
期刊: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
Volume: 2
Issue: 4
起始頁: Q74
結束頁: Q76
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