標題: Microwave Annealing of Phosphorus and Cluster Carbon Implanted (100) and (110) Si
作者: Cho, Ta-Chun
Lu, Yu-Lun
Yao, Jie-Yi
Lee, Yao-Jen
Sekar, Karuppanan
Tokoro, Nobuhiro
Onoda, Hiroshi
Krull, Wade
Current, Michael I.
Chao, Tien-Sheng
電子物理學系
Department of Electrophysics
公開日期: 2013
摘要: Effects of low-temperature (approximate to 500 degrees C) microwave annealing (MWA) of Cluster-Carbon (C-7) and Phosphorus implants are compared with rapid thermal annealing (RTA) at 900 and 1000 degrees C for (100) and (110)-Si substrates. MWA annealing resulted in high levels of substitutional Carbon, 1.57% for (100) Si and 0.99% for (110) Si for C-7 implants. Addition of high-dose Phosphorus implants resulted in lower but still useful substitutional Carbon levels, 1.44% for (100) Si and 0.68% for (110) Si after MWA. RTA annealing at higher temperatures resulted in greatly reduced substitutional Carbon levels and deeper Phosphorus junctions. The effects of subsequent anneals by MWA and RTA methods are reported. MWA is shown to be a promising method for high-channel tensile strain in nMOSFETs with a substantially lower thermal budget than RTA. (C) 2013 The Electrochemical Society. All rights reserved.
URI: http://hdl.handle.net/11536/22449
http://dx.doi.org/10.1149/2.010307jss
ISSN: 2162-8769
DOI: 10.1149/2.010307jss
期刊: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
Volume: 2
Issue: 7
起始頁: P293
結束頁: P298
顯示於類別:期刊論文


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