標題: Evolution of Bottom c-Plane on Wet-Etched Patterned Sapphire Substrate
作者: Chen, Chien-Chih
Hsiao, Feng Ching
Lin, Bo-Wen
Hsu, Wen-Ching
Wu, YewChung Sermon
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 2013
摘要: Wet-etched pattern sapphire substrate (PSS) has been employed to improve the epitaxy of GaN-based LEDs. It was found that the crystal quality and performance of LEDs improved with decrease in c-plane areas of PSS. However, further decrease in bottom c-plane areas makes epitaxy of GaN film very difficult. In this research, the evolution of bottom c-plane was investigated through a systematic study. It was found that epitaxy difficulty might be due to the appearance of 6C facets {4 (1) over bar(3) over bar 18} and the disappearance of bottom c-plane. (C) 2013 The Electrochemical Society.
URI: http://hdl.handle.net/11536/22435
http://dx.doi.org/10.1149/2.022309jss
ISSN: 2162-8769
DOI: 10.1149/2.022309jss
期刊: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
Volume: 2
Issue: 9
起始頁: R169
結束頁: R171
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