標題: Low Operation Voltage InGaZnO Thin Film Transistors with LaAlO3 Gate Dielectric Incorporation
作者: Zheng, Z. W.
Cheng, C. H.
Chen, Y. C.
光電系統研究所
Institute of Photonic System
公開日期: 2013
摘要: In this paper, we report low operation voltage indium gallium zinc oxide (IGZO) thin film transistors (TFTs) incorporating a high-kappa lanthanum aluminum oxide (LaAlO3) as gate dielectric. Good TFT characteristics were achieved simultaneously, including a small subthreshold swing (SS) of 98 mV/dec, a low threshold voltage (V-t) of 0.29 V, a good on-off-state drive current ratio (I-on/I-off) of 1.1 x 10(5), and field effect mobility (mu(FE)) of 5.4 cm(2)/V . sec. These good performances are related to the high gate capacitance density and small equivalent oxide thickness (EOT) provided by the high-kappa LaAlO3 dielectric. Moreover, the effects of oxygen partial pressure during IGZO deposition process on the device characteristics were investigated. The small SS and low V-t allow the devices to be used at operation voltage as low as 1.5 V, which shows the great potential for future high speed and low power applications. (C) 2013 The Electrochemical Society. All rights reserved.
URI: http://hdl.handle.net/11536/22433
http://dx.doi.org/10.1149/2.020309jss
ISSN: 2162-8769
DOI: 10.1149/2.020309jss
期刊: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
Volume: 2
Issue: 9
起始頁: N179
結束頁: N181
顯示於類別:期刊論文


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