|Title:||Low Operation Voltage InGaZnO Thin Film Transistors with LaAlO3 Gate Dielectric Incorporation|
|Authors:||Zheng, Z. W.|
Cheng, C. H.
Chen, Y. C.
Institute of Photonic System
|Abstract:||In this paper, we report low operation voltage indium gallium zinc oxide (IGZO) thin film transistors (TFTs) incorporating a high-kappa lanthanum aluminum oxide (LaAlO3) as gate dielectric. Good TFT characteristics were achieved simultaneously, including a small subthreshold swing (SS) of 98 mV/dec, a low threshold voltage (V-t) of 0.29 V, a good on-off-state drive current ratio (I-on/I-off) of 1.1 x 10(5), and field effect mobility (mu(FE)) of 5.4 cm(2)/V . sec. These good performances are related to the high gate capacitance density and small equivalent oxide thickness (EOT) provided by the high-kappa LaAlO3 dielectric. Moreover, the effects of oxygen partial pressure during IGZO deposition process on the device characteristics were investigated. The small SS and low V-t allow the devices to be used at operation voltage as low as 1.5 V, which shows the great potential for future high speed and low power applications. (C) 2013 The Electrochemical Society. All rights reserved.|
|Journal:||ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY|
|Appears in Collections:||Articles|
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