標題: Analysis of Electrical Characteristics and Reliability Change of Zinc-Tin-Oxide Thin-Film Transistors by Photo-Thermal Treatment
作者: Chen, Yu-Chun
Chang, Ting-Chang
Li, Hung-Wei
Chung, Wan-Fang
Hsieh, Tien-Yu
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
公開日期: 2013
摘要: This study investigates the influence of a photo-thermal treatment on the electrical characteristics and bias-induced instability of amorphous Zn-Sn-O thin film transistors. Sequences of measurements made in both vacuum and oxygen ambient reveal the most pronounced threshold voltage (V-T) shift, i.e., the highest sensitivity of oxygen, occurs in a device with photo-thermal-treatment. After gate-bias stress in vacuum, the treated device shows less V-T shift than that untreated, which can be attributed to residual adsorbed gas molecules on the backchannel. Thus, the proposed photo-thermal-treatment should be conducted before depositing a passivation layer to increase the reliability of devices after stress. (c) 2013 The Electrochemical Society. All rights reserved.
URI: http://hdl.handle.net/11536/22427
http://dx.doi.org/10.1149/2.010309ssl
ISSN: 2162-8742
DOI: 10.1149/2.010309ssl
期刊: ECS SOLID STATE LETTERS
Volume: 2
Issue: 9
起始頁: Q72
結束頁: Q74
顯示於類別:期刊論文


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  1. 000321740400010.pdf