Title: Analysis of Electrical Characteristics and Reliability Change of Zinc-Tin-Oxide Thin-Film Transistors by Photo-Thermal Treatment
Authors: Chen, Yu-Chun
Chang, Ting-Chang
Li, Hung-Wei
Chung, Wan-Fang
Hsieh, Tien-Yu
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Issue Date: 2013
Abstract: This study investigates the influence of a photo-thermal treatment on the electrical characteristics and bias-induced instability of amorphous Zn-Sn-O thin film transistors. Sequences of measurements made in both vacuum and oxygen ambient reveal the most pronounced threshold voltage (V-T) shift, i.e., the highest sensitivity of oxygen, occurs in a device with photo-thermal-treatment. After gate-bias stress in vacuum, the treated device shows less V-T shift than that untreated, which can be attributed to residual adsorbed gas molecules on the backchannel. Thus, the proposed photo-thermal-treatment should be conducted before depositing a passivation layer to increase the reliability of devices after stress. (c) 2013 The Electrochemical Society. All rights reserved.
URI: http://hdl.handle.net/11536/22427
ISSN: 2162-8742
DOI: 10.1149/2.010309ssl
Volume: 2
Issue: 9
Begin Page: Q72
End Page: Q74
Appears in Collections:Articles

Files in This Item:

  1. 000321740400010.pdf