標題: Improved Resistive Switching Characteristics by Al2O3 Layers Inclusion in HfO2-Based RRAM Devices
作者: Huang, Chun-Yang
Jieng, Jheng-Hong
Jang, Wen-Yueh
Lin, Chen-Hsi
Tseng, Tseung-Yuen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2013
摘要: A series of complex HfO2/Al2O3 layer by layer resistive random access memory(RRAM) structure grown by atomic layer deposition are investigated. The modulation of forming voltage can be achieved by controlling the number of Al2O3 layers in HfO2 devices. In addition, the crystallization temperature of HfO2 based RRAM devices can also be improved by insetting Al2O3 layers in HfO2 film. Compared with pure HfO2 device, a significant improvement in resistive switching properties such as forming voltage variation and the distribution of HRS/LRS during resistance switching is demonstrated in the HfO2/Al2O3 layer by layer devices. Moreover, good endurance characteristic and highly reliable multibit operation are also achieved in this device structure. (c) 2013 The Electrochemical Society. All rights reserved.
URI: http://hdl.handle.net/11536/22426
http://dx.doi.org/10.1149/2.006308ssl
ISSN: 2162-8742
DOI: 10.1149/2.006308ssl
期刊: ECS SOLID STATE LETTERS
Volume: 2
Issue: 8
起始頁: P63
結束頁: P65
顯示於類別:期刊論文


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