標題: Enhanced Performance of Poly(3-hexylthiophenes) Based Thin Film Transistors Using Double-Coated Active Layer
作者: Chang, Chia-Hao
Chien, Chao-Hsin
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 2012
摘要: This study demonstrates that thin-film transistors with double-coated poly(3-hexylthiophene) (P3HT) channel layers (DPTFTs), which are formed by coating a second P3HT layer on top of the N-2-annealed first P3HT layer, show a higher on/off current ratio and better subthreshold swing, compared to single-layer P3HT transistors (PTFTs). Characteristics of DPTFTs were investigated by varying the thicknesses of the first P3HT layer and the second P3HT layer. Moreover, DPTFTs with an as-prepared first layer, i.e., without N-2 annealing, were also prepared for comparison. A thin gate oxide was incorporated into the DPTFTs, which resulted in an impressive subthreshold swing (smaller than 1 V/decade). Furthermore, the study proposes new DPTFTs with an N-2-annealed first layer and a functionalized single-wall carbon nanotube (F-SWNCT)-doped P3HT second layer. Significant improvements are observed not only in subthreshold swing and on/off current ratio but also in mobility induced by the innovative channel structure and doping of F-SWCNTs, respectively. (C) 2012 The Electrochemical Society. All rights reserved.
URI: http://hdl.handle.net/11536/22410
http://dx.doi.org/10.1149/2.012206jss
ISSN: 2162-8769
DOI: 10.1149/2.012206jss
期刊: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
Volume: 1
Issue: 6
起始頁: Q130
結束頁: Q134
顯示於類別:期刊論文


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  1. 000319449800024.pdf