標題: Semipolar GaN Films on Prism Stripe Patterned a-Plane Sapphire Substrates
作者: Hsieh, Cheng-Yu
Lin, Bo-Wen
Cheng, Wen-Hao
Wang, Bau-Ming
Chang, Li
Wu, YewChung Sermon
材料科學與工程學系
Department of Materials Science and Engineering
公開日期: 2012
摘要: A (10 (1) over bar4) semipolar GaN layer was grown on periodic stripe patterned a-plane sapphire substrate fabricated by using two-steps etching process. The stripes in prism shape were inclined with sapphire c-axis in 60 degrees. The orientation relationship between semipolar GaN and sapphire is (0002)(GaN)//(2 (1) over bar(1) over bar(3) over bar)(sapphire) and [2 (1) over bar(1) over bar0](GaN)//[23 (5) over bar2](sapphire) as defined by selected area diffraction in transmission electron microscopy (TEM). Growth of semipolar GaN on the sidewalls of the prism stripes is evidenced from TEM and X-ray phi scan. The quality of semipolar GaN film is reasonably good as examined with X-ray rocking curves. In addition, TEM and cathodoluminescence results show that the dislocation density in the semipolar GaN is significantly reduced near the film surface. (C) 2012 The Electrochemical Society. All rights reserved.
URI: http://hdl.handle.net/11536/22409
http://dx.doi.org/10.1149/2.006201jss
ISSN: 2162-8769
DOI: 10.1149/2.006201jss
期刊: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
Volume: 1
Issue: 1
起始頁: R54
結束頁: R56
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