標題: Study of Resistive Switching Characteristics on a Temperature-Sensitive FeOx-Transition Layer in a TiN/SiO2/FeOx/Fe Structure
作者: Chang, Yao-Feng
Tsai, Yu-Ting
Chang, Geng-Wei
Syu, Yong-En
Tai, Ya-Hsiang
Chang, Ting-Chang
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
公開日期: 2012
摘要: Thermal annealing effect and high temperature electrical measurement were studied on a temperature-sensitive FeOx-transition layer of a TiN/SiO2/FeOx/Fe structure, including bipolar switching behaviors, statistics of set and reset electrical characteristics, endurance and retention. Increase of the thermal budget on the structure shrinks both the operation voltage and variation as well as improving the device operation stability and power dissipation. Cross-sectional image, crystallinity and chemical composition analyzes of the FeOx-transition layer were examined by transmission electron microscope, X-ray diffraction and X-ray photon-emission spectra depth profiles, respectively. In addition, for the temperature-sensitive FeOx-containing structure, the resistive switching behaviors and characteristics were also investigated at room temperature and 85 degrees C. These resistive switching behaviors indicate the possible resistive switching mechanism and electrical characteristics, providing a better understanding for the temperature-sensitive FeOx-based memristors. (C) 2012 The Electrochemical Society. All rights reserved.
URI: http://hdl.handle.net/11536/22407
http://dx.doi.org/10.1149/2.003205jss
ISSN: 2162-8769
DOI: 10.1149/2.003205jss
期刊: ECS JOURNAL OF SOLID STATE SCIENCE AND TECHNOLOGY
Volume: 1
Issue: 5
起始頁: Q91
結束頁: Q95
顯示於類別:期刊論文


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