Title: Study Trapped Charge Distribution in P-Channel Silicon-Oxide-Nitride-Oxide-Silicon Memory Device Using Dynamic Programming Scheme
Authors: Li, Fu-Hai
Chiu, Yung-Yueh
Lee, Yen-Hui
Chang, Ru-Wei
Yang, Bo-Jun
Sun, Wein-Town
Lee, Eric
Kuo, Chao-Wei
Shirota, Riichiro
傳播研究所
電機資訊學士班
Institute of Communication Studies
Undergraduate Honors Program of Electrical Engineering and Computer Science
Issue Date: 1-Apr-2013
Abstract: In this study, we precisely investigate the charge distribution in SiN layer by dynamic programming of channel hot hole induced hot electron injection (CHHIHE) in p-channel silicon-oxide-nitride-oxide-silicon (SONOS) memory device. In the dynamic programming scheme, gate voltage is increased as a staircase with fixed step amplitude, which can prohibits the injection of holes in SiN layer. Three-dimensional device simulation is calibrated and is compared with the measured programming characteristics. It is found, for the first time, that the hot electron injection point quickly traverses from drain to source side synchronizing to the expansion of charged area in SiN layer. As a result, the injected charges quickly spread over on the almost whole channel area uniformly during a short programming period, which will afford large tolerance against lateral trapped charge diffusion by baking. (C) 2013 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/JJAP.52.04CD01
http://hdl.handle.net/11536/22392
ISSN: 0021-4922
DOI: 10.7567/JJAP.52.04CD01
Journal: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 52
Issue: 4
End Page: 
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