標題: Few-Layer MoS2 with High Broadband Photogain and Fast Optical Switching for Use in Harsh Environments
作者: Tsai, Dung-Sheng
Liu, Keng-Ku
Lien, Der-Hsien
Tsai, Meng-Lin
Kang, Chen-Fang
Lin, Chin-An
Li, Lain-Jong
He, Jr-Hau
光電工程學系
Department of Photonics
關鍵字: graphene;MoS2;photodetector;high-temperature detection;harsh environment
公開日期: 1-五月-2013
摘要: Few-layered MoS2 as Schottky metal-semiconductor-metal photodetectors (MSM PDs) for use In harsh environments makes its debut as two-dimensional (2D) optoelectronics with high broadband gain (up to 13.3), high detectivity (up to similar to 10(10) cm Hz(1/2)/W), fast photoresponse (rise time of similar to 70 mu s and fall time of similar to 110 mu s), and high thermal stability (at a working temperature of up to 200 degrees C). Ultrahigh responsivity (0.57 A/W) of few-layer MoS2 at 532 nm is due to the high optical absorption (similar to 10% despite being less than 2 nm in thickness) and a high photogain, which sets up a new record that was not achievable in 2D nanomaterials previously. This study opens avenues to develop 2D nanomaterial-based optoelectronics for harsh environments in imaging techniques and light-wave communications as well as in future memory storage and optoelectronic circuits.
URI: http://dx.doi.org/10.1021/nn305301b
http://hdl.handle.net/11536/22376
ISSN: 1936-0851
DOI: 10.1021/nn305301b
期刊: ACS NANO
Volume: 7
Issue: 5
起始頁: 3905
結束頁: 3911
顯示於類別:期刊論文


文件中的檔案:

  1. 000319856300027.pdf