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dc.contributor.authorChang, Yung-Huangen_US
dc.contributor.authorLiu, Chien-Minen_US
dc.contributor.authorCheng, Hsyi-Enen_US
dc.contributor.authorChen, Chihen_US
dc.date.accessioned2014-12-08T15:31:32Z-
dc.date.available2014-12-08T15:31:32Z-
dc.date.issued2013-05-08en_US
dc.identifier.issn1944-8244en_US
dc.identifier.urihttp://dx.doi.org/10.1021/am302219nen_US
dc.identifier.urihttp://hdl.handle.net/11536/22363-
dc.description.abstract2-Dimensional (2-D) TiO2 thin films and 1-dimensional (1-D) TiO2 nanotube arrays were fabricated on Si and quartz substrates using atomic layer deposition (ALD) with an anodic aluminum oxide (AAO) template at 400 degrees C. The film thickness and the tube wall thickness can be precisely controlled using the ALD approach. The intensities of the absorption spectra were enhanced by an increase in the thickness of the TiO2 thin film and tube walls. A blue-shift was observed for a decrease in the 1-D and 2-D TiO2 nanostructure thicknesses, indicating a change in the energy band gap with the change in the size of the TiO2 nanostructures. Indirect and direct interband transitions were used to investigate the change in the energy band gap. The results indicate that both quantum confinement and interband transitions should be considered when the sizes of 1-D and 2-D TiO2 nanostructures are less than 10 nm.en_US
dc.language.isoen_USen_US
dc.subject2-D TiO2 thin filmsen_US
dc.subject1-D TiO2 nanotube arraysen_US
dc.subjectquantum confinementen_US
dc.subjectinterband transitionsen_US
dc.subjectatomic layer depositionen_US
dc.subjectanodic aluminum oxideen_US
dc.titleEffect of Geometric Nanostructures on the Absorption Edges of 1-D and 2-D TiO2 Fabricated by Atomic Layer Depositionen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/am302219nen_US
dc.identifier.journalACS APPLIED MATERIALS & INTERFACESen_US
dc.citation.volume5en_US
dc.citation.issue9en_US
dc.citation.spage3549en_US
dc.citation.epage3555en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000318839100010-
dc.citation.woscount3-
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