標題: The effect of high/low permittivity in bilayer HfO2/BN resistance random access memory
作者: Huang, Jen-Wei
Zhang, Rui
Chang, Ting-Chang
Tsai, Tsung-Ming
Chang, Kuan-Chang
Lou, J. C.
Young, Tai-Fa
Chen, Jung-Hui
Chen, Hsin-Lu
Pan, Yin-Chih
Huang, Xuan
Zhang, Fengyan
Syu, Yong-En
Sze, Simon M.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 20-五月-2013
摘要: This letter investigated the electrical characteristics of resistance random access memory (RRAM) with HfO2/BN bilayer structures. By adopting the high/low permittivity structure, we obtained the excellent device characteristics such as uniform distribution of switching voltage and more stable resistance switching properties of RRAM. The current conduction mechanism of low resistance state in the HfO2/BN device was transferred to space-charge-limited current conduction from Ohmic conduction owing to space electric effect concentrated by the high/low permittivity bilayer structures. The electric field in the bilayer can be verified by COMSOL simulation software. (C) 2013 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4807577
http://hdl.handle.net/11536/22359
ISSN: 0003-6951
DOI: 10.1063/1.4807577
期刊: APPLIED PHYSICS LETTERS
Volume: 102
Issue: 20
結束頁: 
顯示於類別:期刊論文


文件中的檔案:

  1. 000320619300093.pdf