標題: Characteristics of size dependent conductivity of the CNT-interconnects formed by low temperature process
作者: Chiu, Wei-Chih
Tsui, Bing-Yue
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-六月-2013
摘要: In this paper, a simple and low temperature fabrication process, slow spin rate coating and dry etching, is proposed to construct the CNT-interconnects for future VLSI interconnect applications. Two sets of CNT-interconnects named width and length varying interconnects were fabricated to investigate the characterization of size dependent conductivity of CNT-interconnects. Not only the amount of the CNT solution spin-coated for forming the CNT networks but also the area of CNT-interconnect regime would affect the conductance, variation, and conductive probability of CNT-interconnects. The yield of working CNT-interconnects does not show direct relation with the conductive probability or the amount of the CNT solution for CNT network formation. Based on the percolation theory, we characterize the average conductance of size-varying CNT-interconnects by three regions: percolation region, power region and linear region. In addition, as the density within a specified CNT-interconnect regime accumulates, the conductive behavior would be eventually characterized as a conventional resistor. (C) 2013 Elsevier Ltd. All rights reserved.
URI: http://dx.doi.org/10.1016/j.microrel.2013.03.001
http://hdl.handle.net/11536/22343
ISSN: 0026-2714
DOI: 10.1016/j.microrel.2013.03.001
期刊: MICROELECTRONICS RELIABILITY
Volume: 53
Issue: 6
起始頁: 906
結束頁: 911
顯示於類別:期刊論文


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  1. 000320424800018.pdf