標題: Band Alignment Parameters of Al2O3/InSb Metal-Oxide-Semiconductor Structure and Their Modification with Oxide Deposition Temperatures
作者: Hai Dang Trinh
Minh Thuy Nguyen
Lin, Yueh Chin
Quoc Van Duong
Hong Quan Nguyen
Chang, Edward Yi
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
公開日期: 1-Jun-2013
摘要: From the Fowler-Nordheim (FN) current-voltage (I-V) characteristic and X-ray photoelectron spectroscopy (XPS) analysis, the conduction band offset of 2.73 +/- 0.1 eV and the valence band offset of 3.76 +/- 0.1 eV have been extracted for the atomic-layer-deposition (ALD) Al2O3/InSb structure. By these analyses, the parameters of an Al2O3 film including bandgap, electron affinity, and electron effective mass are also deduced. The capacitance-voltage and I-V characteristics of ALD Al2O3/InSb at different deposition temperatures indicate the modification of the Fermi level in InSb to 0.09 eV lower than that in metal side of the sample deposited at 250 degrees C as compared to the samples deposited at lower temperatures. (C) 2013 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/APEX.6.061202
http://hdl.handle.net/11536/22336
ISSN: 1882-0778
DOI: 10.7567/APEX.6.061202
期刊: APPLIED PHYSICS EXPRESS
Volume: 6
Issue: 6
結束頁: 
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