標題: Photoluminescence from InN Nanorod Arrays with a Critical Size
作者: Ahn, Hyeyoung
Liu, Yu-Sheng
Chang, Ke-Yang
Gwo, Shangjr
光電工程學系
Department of Photonics
公開日期: 1-六月-2013
摘要: In this report, we investigated the rod size dependence of photoluminescence (PL) from vertically aligned indium nitride (InN) nanorod arrays grown on Si(111) substrates. Abnormal temperature dependence of the PL peak energy and the PL bandwidth was observed for InN nanorods with a critical diameter, which is of the same order of the surface electron accumulation layer (similar to 20 nm). Exceptionally large activation energy of the nanorods with the critical diameter implies that holes within these narrow nanorods need to surpass the band bending energy near the surface in order to recombine with electrons accumulated in the surface layer. (C) 2013 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/APEX.6.062103
http://hdl.handle.net/11536/22335
ISSN: 1882-0778
DOI: 10.7567/APEX.6.062103
期刊: APPLIED PHYSICS EXPRESS
Volume: 6
Issue: 6
結束頁: 
顯示於類別:期刊論文


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  1. 000320167300014.pdf