Title: Effects of Doping Ratio and Thermal Annealing on Structural and Electrical Properties of Boron-Doped ZnO Thin Films by Spray Pyrolysis
Authors: Yu, Cheng-Chang
Hsu, Yu-Ting
Lee, Shao-Yi
Lan, Wen-How
Kuo, Hsin-Hui
Shih, Ming-Chang
Feng, David Jui-Yang
Huang, Kai-Feng
電子物理學系
Department of Electrophysics
Issue Date: 1-Jun-2013
Abstract: Boron-doped zinc oxide (BZO) thin films have been fabricated by spray pyrolysis on a glass substrate. The morphology and electrical properties of the thin films were investigated. X-ray diffraction (XRD) and scanning electron microscopy (SEM) analyses were performed. It was found that [B]/[Zn] ratio altered both the microstructure and concentration of the BZO thin films. The film grain size was reduced by increasing the [B]/[Zn] ratio. The highest Hall mobility was 3.65 cm(2)V(-1)s(-1) for the undoped ZnO thin film, and the highest carrier concentration of 1.0 x 10(19) cm(-3) was achieved for the as-deposited BZO thin film with [B]/[Zn] = 1.5 at. %. Conductivity was determined at different measurement temperatures and shallow donors provided the dominate conduction mechanism for the as-deposited BZO thin films. After 600 degrees C annealing, shallow level reduction and donors with a high activation energy of 129 +/- 6 meV in the BZO thin films were characterized, and the shallow donors that dominate the carrier concentration for the as-deposited spray-pyrolized BZO thin film were eliminated. (C) 2013 The Japan Society of Applied Physics
URI: http://dx.doi.org/10.7567/JJAP.52.065502
http://hdl.handle.net/11536/22333
ISSN: 0021-4922
DOI: 10.7567/JJAP.52.065502
Journal: JAPANESE JOURNAL OF APPLIED PHYSICS
Volume: 52
Issue: 6
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