標題: Projected Efficiency of Polarization-Matched p-InxGa1-xN/i-InyGa1-yN/n-GaN Double Heterojunction Solar Cells
作者: Wang, Hsun-Wen
Yu, Peichen
Wu, Yuh-Renn
Kuo, Hao-Chung
Chang, Edward Yi
Lin, Shiuan-Huei
材料科學與工程學系
電子物理學系
光電工程學系
Department of Materials Science and Engineering
Department of Electrophysics
Department of Photonics
關鍵字: InGaN solar cells;polarization effect
公開日期: 1-七月-2013
摘要: Traditional p-GaN/i-InGaN/n-GaN double heterojunction solar cells have limited power conversion efficiency due to large polarization charges that accumulate at the heterojunction interfaces, leading to severe band bending that, in turn, hinders the carrier transport. In this study, we proposed the use of a p-type InGaN layer to reduce the polarization field and projected the power conversion efficiencies of p-InxGa1-xN/i-InyGa1-yN/n-GaN double heterojunction solar cells that are grown on a c-facet sapphire substrate with various indium components. Numerical simulations predict that a maximal power conversion efficiency that is close to 7% with a short-circuit current density of 4.05 mA/cm(2) and an open-circuit voltage of 1.94 V can be achieved with a p-In0.2Ga0.8N/i-In0.2Ga0.8N/n-GaN structure due to a polarization-matched p-i interface. Further efficiency enhancement with a higher indium composition over 20% is also possible via the redistribution of the built-in potential with n-GaN doping.
URI: http://dx.doi.org/10.1109/JPHOTOV.2013.2252953
http://hdl.handle.net/11536/22259
ISSN: 2156-3381
DOI: 10.1109/JPHOTOV.2013.2252953
期刊: IEEE JOURNAL OF PHOTOVOLTAICS
Volume: 3
Issue: 3
起始頁: 985
結束頁: 990
顯示於類別:期刊論文


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