Title: Projected Efficiency of Polarization-Matched p-InxGa1-xN/i-InyGa1-yN/n-GaN Double Heterojunction Solar Cells
Authors: Wang, Hsun-Wen
Yu, Peichen
Wu, Yuh-Renn
Kuo, Hao-Chung
Chang, Edward Yi
Lin, Shiuan-Huei
Department of Materials Science and Engineering
Department of Electrophysics
Department of Photonics
Keywords: InGaN solar cells;polarization effect
Issue Date: 1-Jul-2013
Abstract: Traditional p-GaN/i-InGaN/n-GaN double heterojunction solar cells have limited power conversion efficiency due to large polarization charges that accumulate at the heterojunction interfaces, leading to severe band bending that, in turn, hinders the carrier transport. In this study, we proposed the use of a p-type InGaN layer to reduce the polarization field and projected the power conversion efficiencies of p-InxGa1-xN/i-InyGa1-yN/n-GaN double heterojunction solar cells that are grown on a c-facet sapphire substrate with various indium components. Numerical simulations predict that a maximal power conversion efficiency that is close to 7% with a short-circuit current density of 4.05 mA/cm(2) and an open-circuit voltage of 1.94 V can be achieved with a p-In0.2Ga0.8N/i-In0.2Ga0.8N/n-GaN structure due to a polarization-matched p-i interface. Further efficiency enhancement with a higher indium composition over 20% is also possible via the redistribution of the built-in potential with n-GaN doping.
URI: http://dx.doi.org/10.1109/JPHOTOV.2013.2252953
ISSN: 2156-3381
DOI: 10.1109/JPHOTOV.2013.2252953
Volume: 3
Issue: 3
Begin Page: 985
End Page: 990
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