標題: High-kappa Eu2O3 and Y2O3 Poly-Si Thin-Film Transistor Nonvolatile Memory Devices
作者: Pan, Tung-Ming
Yen, Li-Chen
Huang, Sheng-Hao
Lo, Chieh-Ting
Chao, Tien-Sheng
電子物理學系
Department of Electrophysics
關鍵字: Charge-trapping layer;Eu2O3;low-temperature polycrystalline silicon thin-film transistor (LTPS-TFT);Y2O3
公開日期: 1-七月-2013
摘要: In this paper, we have successfully fabricated low-temperature polycrystalline silicon thin-film transistor (LTPS-TFT) nonvolatile memory devices employing high-kappa Eu2O3 and Y2O3 films as the charge trapping layer. The LTPS-TFT memory device uses band-to-band tunneling-induced hot hole injection and gate Fowler-Nordheim injection as the program and erase methods, respectively. Compared with the Y2O3 film, the LTPS-TFT memory device using an Eu2O3 charge-trapping layer exhibited a lower subthreshold swing and a larger memory window, a smaller charge loss, and a better endurance performance, presumably because of the higher charge-trapping efficiency of the Eu2O3 film.
URI: http://dx.doi.org/10.1109/TED.2013.2261511
http://hdl.handle.net/11536/22247
ISSN: 0018-9383
DOI: 10.1109/TED.2013.2261511
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 60
Issue: 7
起始頁: 2251
結束頁: 2255
顯示於類別:期刊論文


文件中的檔案:

  1. 000320870000023.pdf