Title: Polycrystalline silicon thin-film transistor utilizing self-assembled monolayer for crystallization
Authors: Tojo, Yosuke
Miura, Atsushi
Ishikawa, Yasuaki
Yamashita, Ichiro
Uraoka, Yukiharu
Department of Applied Chemistry
Institute of Molecular science
Keywords: Polycrystalline silicon;N-(2-aminoethyl)-3-aminopropyltrimethoxysilane;Self-assembled monolayers;Metal-induced lateral crystallization;Thin-film transistors
Issue Date: 1-Jul-2013
Abstract: Crystallization employing an N-(2-aminoethyl)-3-aminopropyltrimethoxysilane self-assembled monolayer (AEAPS-SAM) to coordinate Ni metal catalyst was found to produce large grain poly-Si. A small concentration of Ni could be deposited controllably onto an AEAPS-SAM covered with Si by immersing it in Ni solution for 1-60 min. Larger grains and a lower Ni concentration in the poly-Si could be obtained by shorter immersion. Immersion for 1 min produced grains, as large as 47 mu m and a Ni concentration as low as 7.4 x 10(18) atoms/cm(3). A poly-Si thin-film transistor fabricated with AEAPS-SAMpoly-Si of 1 min immersion had a field-effect mobility of 98 cm(2)/(V s), which is one order of magnitude higher than that of a thin-film transistor fabricated without the AEAPS-SAM treatment. (C) 2013 Elsevier B. V. All rights reserved.
URI: http://dx.doi.org/10.1016/j.tsf.2013.06.006
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2013.06.006
Volume: 540
Begin Page: 266
End Page: 270
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