標題: Controlled synthesis of VO2(R), VO2(B), and V2O3 vanadium-oxide nanowires
作者: Ke, Jhih-Syuan
Weng, Sheng-Feng
Wu, Ming-Cheng
Lee, Chi-Shen
應用化學系
Department of Applied Chemistry
關鍵字: V2O5;VO2(R);VO2(B);V2O3;Nanowire;Film;Morphology control
公開日期: 1-七月-2013
摘要: Vanadium-oxide nanowires (NWs) V2O5, VO2(R), VO2(B), and V2O3 are deposited on a substrate to study their field-emission properties. V2O5 NWs are prepared by thermal evaporation via vapor transport of a vanadium-oxide complex under mild conditions. Films of VO2 and V2O3 wires are subsequently prepared by reducing V2O5 one-dimensional nanocrystals at 450 degrees C with hydrogen gas. The composition of the flowing H-2/Ar mixture and the duration of reduction are utilized to control the formation of VO2(R) or VO2(B) NWs. The crystallinity and morphology of products as prepared are characterized using several techniques, including powder X-ray diffraction, a scanning electron microscope, and a transmission electron microscope. The field-emission properties of the vanadium-oxide NWs as prepared exhibit a turn-on field of 4.56-7.65 V/mu m and an emission current density up to 3.68-8.36 mA/cm(2). These features indicate that vanadium-oxide NWs have potential FE emitter applications.
URI: http://dx.doi.org/10.1007/s11051-013-1632-3
http://hdl.handle.net/11536/22225
ISSN: 1388-0764
DOI: 10.1007/s11051-013-1632-3
期刊: JOURNAL OF NANOPARTICLE RESEARCH
Volume: 15
Issue: 7
結束頁: 
顯示於類別:期刊論文


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