Title: Abnormal sub-threshold swing degradation under dynamic hot carrier stress in HfO2/TiN n-channel metal-oxide-semiconductor field-effect-transistors
Authors: Tsai, Jyun-Yu
Chang, Ting-Chang
Lo, Wen-Hung
Chen, Ching-En
Ho, Szu-Han
Chen, Hua-Mao
Tai, Ya-Hsiang
Cheng, Osbert
Huang, Cheng-Tung
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
Issue Date: 8-Jul-2013
Abstract: This work finds abnormal sub-threshold swing (S.S.) degradation under dynamic hot carrier stress (HCS) in n-channel metal-oxide-semiconductor field-effect-transistors with high-k gate dielectric. Results indicate that there is no change in S.S. after dynamic HCS due to band-to-band hot hole injection at the drain side which acts to diminish the stress field. Moreover, the impaired stress field causes the interface states to mainly distribute in shallow states. This results in ON state current and transconductance decreases, whereas S.S. degradation is insignificant after dynamic HCS. The proposed model is confirmed by one-side charge pumping measurement and gate-to-drain capacitance at varying frequencies. (C) 2013 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4811784
http://hdl.handle.net/11536/22203
ISSN: 0003-6951
DOI: 10.1063/1.4811784
Journal: APPLIED PHYSICS LETTERS
Volume: 103
Issue: 2
End Page: 
Appears in Collections:Articles


Files in This Item:

  1. 000321761000038.pdf