標題: Unipolar resistive switching behavior in Pt/HfO2/TiN device with inserting ZrO2 layer and its 1 diode-1 resistor characteristics
作者: Lee, Dai-Ying
Tsai, Tsung-Ling
Tseng, Tseung-Yuen
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 15-七月-2013
摘要: Transition of resistive switching (RS) behavior from bipolar to unipolar is observed in Pt/ZrO2/HfO2/TiN device. Due to the lower oxygen vacancy concentration of the HfO2 layer, formation/rupture of the conducting filament is confined in the HfO2 layer. To fulfill one diode and one resistor (1D1R) structure, the electrical relation between the RS device and diode is investigated. A Pt/InZnO/CoO/Pt/TiN oxide diode is fabricated to provide enough forward current and large forward/reverse current ratio to achieve unipolar RS behavior. The 1D-1R structure with Pt/ZrO2/HfO2/TiN resistive random access memory shows robust retention and nondestructive readout property at 85 degrees C. (C) 2013 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4816053
http://hdl.handle.net/11536/22194
ISSN: 0003-6951
DOI: 10.1063/1.4816053
期刊: APPLIED PHYSICS LETTERS
Volume: 103
Issue: 3
結束頁: 
顯示於類別:期刊論文


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  1. 000322146300073.pdf