Title: Fabrication, characterization and simulation of Omega-gate twin poly-Si FinFET nonvolatile memory
Authors: Yeh, Mu-Shih
Wu, Yung-Chun
Hung, Min-Feng
Liu, Kuan-Cheng
Jhan, Yi-Ruei
Chen, Lun-Chun
Chang, Chun-Yen
Department of Electronics Engineering and Institute of Electronics
Keywords: Twin poly-Si;FinFET;TFT;Nonvolatile memory;Omega-gate;Nanowires;Three-dimensional;Flash memory
Issue Date: 22-Jul-2013
Abstract: This study proposed the twin poly-Si fin field-effect transistor (FinFET) nonvolatile memory with a structure that is composed of Omega-gate nanowires (NWs). Experimental results show that the NW device has superior memory characteristics because its Omega-gate structure provides a large memory window and high program/erase efficiency. With respect to endurance and retention, the memory window can be maintained at 3.5 V after 10(4) program and erase cycles, and after 10 years, the charge is 47.7% of its initial value. This investigation explores its feasibility in the future active matrix liquid crystal display system-on-panel and three-dimensional stacked flash memory applications.
URI: http://dx.doi.org/10.1186/1556-276X-8-331
ISSN: 1931-7573
DOI: 10.1186/1556-276X-8-331
Volume: 8
End Page: 
Appears in Collections:Articles

Files in This Item:

  1. 000322786200001.pdf