|標題:||Enhancement of the stability of resistive switching characteristics by conduction path reconstruction|
Sze, Simon M.
Department of Electronics Engineering and Institute of Electronics
|摘要:||In this study, a Pt/BiFeO3/TiN device was fabricated and the resistance switching characteristics were investigated. After the first forming process, the conduction path was formed and exhibited unstable bipolar switching characteristics. Subsequently, the original conduction path was destroyed thoroughly by high negative bias. By reconstructing the conduction path after a second forming process (re-forming process), the device exhibits stable bipolar switching characteristics. Transmission electron microscopy analysis indicates that the stability of switching behavior was enhanced because of the joule heating effect, and is an easy way to improve the resistance switching characteristics. (C) 2013 AIP Publishing LLC.|
|期刊:||APPLIED PHYSICS LETTERS|
|Appears in Collections:||Articles|
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