標題: Enhancement of the stability of resistive switching characteristics by conduction path reconstruction
作者: Huang, Jheng-Jie
Chang, Ting-Chang
Yu, Chih-Cheng
Huang, Hui-Chun
Chen, Yu-Ting
Tseng, Hsueh-Chih
Yang, Jyun-Bao
Sze, Simon M.
Gan, Der-Shin
Chu, Ann-Kuo
Lin, Jian-Yang
Tsai, Ming-Jinn
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
公開日期: 22-七月-2013
摘要: In this study, a Pt/BiFeO3/TiN device was fabricated and the resistance switching characteristics were investigated. After the first forming process, the conduction path was formed and exhibited unstable bipolar switching characteristics. Subsequently, the original conduction path was destroyed thoroughly by high negative bias. By reconstructing the conduction path after a second forming process (re-forming process), the device exhibits stable bipolar switching characteristics. Transmission electron microscopy analysis indicates that the stability of switching behavior was enhanced because of the joule heating effect, and is an easy way to improve the resistance switching characteristics. (C) 2013 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4816269
http://hdl.handle.net/11536/22183
ISSN: 0003-6951
DOI: 10.1063/1.4816269
期刊: APPLIED PHYSICS LETTERS
Volume: 103
Issue: 4
結束頁: 
顯示於類別:期刊論文


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