標題: Investigation of Characteristics of Al2O3/n-In (x) Ga1-x As (x=0.53, 0.7, and 1) Metal-Oxide-Semiconductor Structures
作者: Trinh, Hai-Dang
Lin, Yueh-Chin
Kuo, Chien-I
Chang, Edward Yi
Hong-Quan Nguyen
Wong, Yuen-Yee
Yu, Chih-Chieh
Chen, Chi-Ming
Chang, Chia-Yuan
Wu, Jyun-Yi
Chiu, Han-Chin
Yu, Terrence
Chang, Hui-Cheng
Tsai, Joseph
Hwang, David
材料科學與工程學系
電子工程學系及電子研究所
Department of Materials Science and Engineering
Department of Electronics Engineering and Institute of Electronics
關鍵字: ALD Al2O3;surface treatment;InGaAs;InAs;MOSCAPs
公開日期: 1-Aug-2013
摘要: The electrical properties of Al2O3/n-InGaAs metal-oxide-semiconductor capacitors (MOSCAPs) with In content of 0.53, 0.7, and 1 (InAs) have been investigated. Results show small capacitance-voltage (C-V) frequency dispersion in accumulation (1.70% to 1.85% per decade) for these MOSCAPs, mostly being assigned to border traps in Al2O3. With higher In content, shorter minority-carrier response time and smaller C-V hysteresis are observed. The reduction of C-V hysteresis might be related to the reduction of Ga-bearing oxides in Al2O3/InGaAs interfaces as indicated by x-ray photoelectron spectroscopy.
URI: http://dx.doi.org/10.1007/s11664-013-2616-x
http://hdl.handle.net/11536/22145
ISSN: 0361-5235
DOI: 10.1007/s11664-013-2616-x
期刊: JOURNAL OF ELECTRONIC MATERIALS
Volume: 42
Issue: 8
起始頁: 2439
結束頁: 2444
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