標題: NBTI Degradation in LTPS TFTs Under Mechanical Tensile Strain
作者: Lin, Chia-Sheng
Chen, Ying-Chung
Chang, Ting-Chang
Jian, Fu-Yen
Hsu, Wei-Che
Kuo, Yuan-Jui
Dai, Chih-Hao
Chen, Te-Chih
Lo, Wen-Hung
Hsieh, Tien-Yu
Shih, Jou-Miao
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: LTPS;NBTI;tensile strained
公開日期: 1-七月-2011
摘要: This letter investigates the negative-bias temperature instability (NBTI) degradation of p-channel low-temperature polycrystalline-silicon thin-film transistors (LTPS TFTs) under mechanical tensile stress. Experimental results reveal that the interface state density N(it) and grain boundary trap density N(trap) of tensile-strained LTPS TFTs are more pronounced than those of unstrained LTPS TFTs. Extracted density of states and conduction activation energy E(a) both show increases due to the strained Si-Si bonds, which implies that strained Si-Si bonds are able to react with dissociated H during NBTI stress. Therefore, NBTI degradation is more significant after tensile strain than in an unstrained condition.
URI: http://dx.doi.org/10.1109/LED.2011.2144953
http://hdl.handle.net/11536/22143
ISSN: 0741-3106
DOI: 10.1109/LED.2011.2144953
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 32
Issue: 7
起始頁: 907
結束頁: 909
顯示於類別:期刊論文


文件中的檔案:

  1. 000292165200025.pdf