標題: Passivation-Induced Subthreshold Kink Effect of Ultrathin-Oxide Low-Temperature Polycrystalline Silicon Thin Film Transistors
作者: Tsai, Mon-Chin
Liao, Ta-Chuan
Lee, I-Che
Cheng, Huang-Chung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Electron cyclotron resonance (ECR) oxide;plasma passivation;subthreshold kink effect;thin-film transistor (TFT)
公開日期: 1-七月-2011
摘要: Polycrystalline silicon thin-film transistors (poly-Si TFTs) with an ultrathin electron cyclotron resonance plasma-oxidized gate oxide have been fabricated. These ultrathin gate oxide poly-Si TFTs demonstrate better gate controllability and short-channel effect suppression, as compared with conventional thick-gate oxide poly-Si TFTs. A subthreshold kink effect has been observed in these ultrathin gate oxide poly-Si TFTs after NH(3) plasma treatment for the first time. The ultrathin oxide will limit the diffusion of plasma radicals, resulting in plasma radical pileup along the channel width, causing this subthreshold kink effect. The kink effect will be less significant in devices with a narrow channel width as the current flow associated with the corners of the device will dominate over the flat-plate region.
URI: http://dx.doi.org/10.1109/LED.2011.2145410
http://hdl.handle.net/11536/22132
ISSN: 0741-3106
DOI: 10.1109/LED.2011.2145410
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 32
Issue: 7
起始頁: 904
結束頁: 906
顯示於類別:期刊論文


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  1. 000292165200024.pdf