標題: On the Origin of Gate-Induced Floating-Body Effect in PD SOI p-MOSFETs
作者: Dai, Chih-Hao
Chang, Ting-Chang
Chu, An-Kuo
Kuo, Yuan-Jui
Jian, Fu-Yen
Lo, Wen-Hung
Ho, Szu-Han
Chen, Ching-En
Chung, Wan-Lin
Shih, Jou-Miao
Xia, Guangrui
Cheng, Osbert
Huang, Cheng-Tung
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: EVB tunneling;gate-induced floating-body effect (GIFBE);negative-bias temperature instability (NBTI);silicon-on-insulator (SOI)
公開日期: 1-Jul-2011
摘要: This letter systematically investigates the origin of gate-induced floating-body effect (GIFBE) in partially depleted silicon-on-insulator p-type MOSFETs. The experimental results indicate that GIFBE causes a reduction in the electrical oxide field, leading to an underestimate of negative-bias temperature instability degradation. This can be partially attributed to the electrons tunneling from the process-induced partial n(+) polygate. However, based on different operation conditions, we found that the dominant origin of electrons was strongly dependent on holes in the inversion layer under source/drain grounding. This suggests that the mechanism of GIFBE at higher voltages is dominated by the proposed anode electron injection model, rather than the electron valence band tunneling widely accepted as the mechanism for n-MOSFETs.
URI: http://dx.doi.org/10.1109/LED.2011.2142412
http://hdl.handle.net/11536/22109
ISSN: 0741-3106
DOI: 10.1109/LED.2011.2142412
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 32
Issue: 7
起始頁: 847
結束頁: 849
Appears in Collections:Articles