標題: Amorphous-Layer Regrowth and Activation of P and As Implanted Si by Low-Temperature Microwave Annealing
作者: Hsueh, Fu-Kuo
Lee, Yao-Jen
Lin, Kun-Lin
Current, Michael I.
Wu, Ching-Yi
Chao, Tien-Sheng
電子物理學系
Department of Electrophysics
關鍵字: Low temperature;microwave annealing;solid-phase epitaxily growth (SPEG)
公開日期: 1-Jul-2011
摘要: Microwave annealing of dopants in Si has been reported to produce highly activated junctions at temperatures far below those needed for comparable results using conventional thermal processes. However, the details of the kinetics and mechanisms for microwave annealing are far from well understood. In this paper, 20-keV arsenic (As) and 15-keV phosphorus (P) implants, in a dose range from 1 to 5 x 10(15) ion/cm(2), were annealed by microwave methods at temperatures below 500 degrees.C. These junctions were characterized by profile studies with secondary ion mass spectrometry and spreading resistance profiling, sheet resistance with four-point probe, and extensive use of cross-sectional transmission electron microscopy to follow the regrowth of the as-implanted amorphous layers created by the implantation. The amorphous-layer regrowth was observed to be uneven in time, with relatively little amorphous/crystalline interface motion for less than 50 s, followed by rapid regrowth for longer times. Sheet resistance values continued to drop for anneal times after the regrowth process was complete, with some evidence of dopant deactivation for anneal times of 600 s.
URI: http://dx.doi.org/10.1109/TED.2011.2132801
http://hdl.handle.net/11536/22054
ISSN: 0018-9383
DOI: 10.1109/TED.2011.2132801
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 58
Issue: 7
起始頁: 2088
結束頁: 2093
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