標題: Semiself-Protection Scheme for Gigahertz High-Frequency Output ESD Protection
作者: Lee, Jian-Hsing
Huang, Shao-Chang
Su, Hung-Der
Chen, Ke-Horng
電控工程研究所
Institute of Electrical and Control Engineering
關鍵字: Electrostatic discharge (ESD);radio frequency;silicon-controlled rectifier (SCR)
公開日期: 1-Jul-2011
摘要: In this paper, a semiself-protection scheme is proposed and developed for gigahertz output electrostatic-discharge (ESD) protection. The output transistor acts as a trigger device to trigger the ESD protection device, and then, it is turned off when the ESD protection device turns on. Thus, the capacitance of a gigahertz high-frequency output pad can be minimized because this scheme is without any additional trigger device or any passive component.
URI: http://dx.doi.org/10.1109/TED.2011.2143717
http://hdl.handle.net/11536/22034
ISSN: 0018-9383
DOI: 10.1109/TED.2011.2143717
期刊: IEEE TRANSACTIONS ON ELECTRON DEVICES
Volume: 58
Issue: 7
起始頁: 1914
結束頁: 1921
Appears in Collections:Articles