Full metadata record
DC FieldValueLanguage
dc.contributor.authorLuo, Wun-Chengen_US
dc.contributor.authorLiu, Jen-Chiehen_US
dc.contributor.authorFeng, Hsien-Tsungen_US
dc.contributor.authorLin, Yen-Chuanen_US
dc.contributor.authorHuang, Jiun-Jiaen_US
dc.contributor.authorLin, Kuan-Liangen_US
dc.contributor.authorHou, Tuo-Hungen_US
dc.date.accessioned2014-12-08T15:30:46Z-
dc.date.available2014-12-08T15:30:46Z-
dc.date.issued2012en_US
dc.identifier.isbn978-1-4673-4870-6en_US
dc.identifier.urihttp://hdl.handle.net/11536/21985-
dc.description.abstractThis paper presents a first comprehensive study of SET speed-disturb dilemma in RRAM using statistically-based prediction methodologies. A rapid ramped-voltage stress based on percolation model and power-law V-t dependence showed excellent agreement with the time-consuming constant-voltage stress, and was applied to evaluate current status of RRAM devices in the literature.en_US
dc.language.isoen_USen_US
dc.titleRRAM SET Speed-Disturb Dilemma and Rapid Statistical Prediction Methodologyen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2012 IEEE INTERNATIONAL ELECTRON DEVICES MEETING (IEDM)en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000320615600055-
Appears in Collections:Conferences Paper