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dc.contributor.authorLi, Chun-Hsingen_US
dc.contributor.authorKuo, Chien-Nanen_US
dc.contributor.authorKuo, Ming-Chingen_US
dc.date.accessioned2014-12-08T15:30:45Z-
dc.date.available2014-12-08T15:30:45Z-
dc.date.issued2013en_US
dc.identifier.isbn978-1-4673-1553-1en_US
dc.identifier.urihttp://hdl.handle.net/11536/21968-
dc.description.abstractThis work presents a high Q on-chip bondwire transformer and its application to a low power receiver front-end design. The proposed bondwire transformer has the advantage of high quality factor, less sensitivity to the bonding height variation, and working as a balun to conduct single-to-differential conversion. Furthermore, the chip area under the bondwire transformer can be reused by the mixer and buffer circuits to reduce the cost. The receiver front-end is realized in 1P6M 0.18 mu m CMOS technology. The measured input return loss, the conversion gain, the noise figure, and the input third-order intercept point are 12.7 dB, 20.5 dB, 9.8 dB, and -4.0 dBm, respectively, at 2.1 GHz. The power consumption is only 1.1 mW from a 1 V supply.en_US
dc.language.isoen_USen_US
dc.subjectLow poweren_US
dc.subjectbondwireen_US
dc.subjecttransformeren_US
dc.subjectreceiveren_US
dc.titleA High Q On-Chip Bondwire Transformer and Its Application to Low Power Receiver Front-End Designen_US
dc.typeProceedings Paperen_US
dc.identifier.journal2013 IEEE 13TH TOPICAL MEETING ON SILICON MONOLITHIC INTEGRATED CIRCUITS IN RF SYSTEMS (SIRF)en_US
dc.citation.spage120en_US
dc.citation.epage122en_US
dc.contributor.department電子工程學系及電子研究所zh_TW
dc.contributor.departmentDepartment of Electronics Engineering and Institute of Electronicsen_US
dc.identifier.wosnumberWOS:000320727000041-
Appears in Collections:Conferences Paper