標題: NOVEL STRUCTURE FOR MEASURING THE DENSITY-OF-STATE DISTRIBUTION OF HIGH-RESISTIVITY SEMICONDUCTOR-FILMS BY ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY
作者: CHEN, YE
WANG, FS
TSAI, JW
CHENG, HC
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: DENSITY-OF-STATE DISTRIBUTION;HIGH-RESISTIVITY SEMICONDUCTORS;ISOTHERMAL CAPACITANCE TRANSIENT SPECTROSCOPY (ICTS)
公開日期: 1-十二月-1994
摘要: A novel structure, metal/high-resistivity semiconductor (HRS)/n-type c-Si substrate with the space charge region (SCR) entirely covering the HRS film and penetrating into the c-Si substrate, has been proposed for determining the density-of-state distribution g(E) of the HRS films via the isothermal capacitance transient spectroscopy (ICTS) method. The structure has been tested and applied to the measurement of g(E) of the undoped hydrogenated amorphous silicon (a-Si:H) film. For undoped a-Si:H film with optical gap E(o) = 1.72 eV, a peak in g(E) is observed at 0.66 eV below the conduction band mobility edge E(c), with the attempt-to-escape frequency of u(n) = 1.61 x 10(13) s(-1). These midgap states are surmised to be correlated with the doubly occupied dangling bond D-.
URI: http://dx.doi.org/10.1143/JJAP.33.6727
http://hdl.handle.net/11536/2195
ISSN: 0021-4922
DOI: 10.1143/JJAP.33.6727
期刊: JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS
Volume: 33
Issue: 12A
起始頁: 6727
結束頁: 6732
顯示於類別:期刊論文


文件中的檔案:

  1. A1994RX26200062.pdf