Title: Atomic-level quantized reaction of HfOx memristor
Authors: Syu, Yong-En
Chang, Ting-Chang
Lou, Jyun-Hao
Tsai, Tsung-Ming
Chang, Kuan-Chang
Tsai, Ming-Jinn
Wang, Ying-Lang
Liu, Ming
Sze, Simon M.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
Issue Date: 29-Apr-2013
Abstract: In this study, we have observed dynamic switching behaviors in a memristive device. There are only a few atoms in the resistive switching reaction which enables the high-speed resistive switching characteristics, which was analyzed dynamically by real-time analyzing tools. From fundamental conductance considerations, the resistance of the conductive path in HfOx memristor is found to be due to barriers which are atomically incremented during the RESET process. Simultaneously, we have demonstrated the quantized switching phenomena at ultra-cryogenic temperature (4 K), which are attributed to the atomic-level reaction in metallic filament. (C) 2013 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4802821
http://hdl.handle.net/11536/21923
ISSN: 0003-6951
DOI: 10.1063/1.4802821
Journal: APPLIED PHYSICS LETTERS
Volume: 102
Issue: 17
End Page: 
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