|標題:||Atomic-level quantized reaction of HfOx memristor|
Sze, Simon M.
Department of Electronics Engineering and Institute of Electronics
|摘要:||In this study, we have observed dynamic switching behaviors in a memristive device. There are only a few atoms in the resistive switching reaction which enables the high-speed resistive switching characteristics, which was analyzed dynamically by real-time analyzing tools. From fundamental conductance considerations, the resistance of the conductive path in HfOx memristor is found to be due to barriers which are atomically incremented during the RESET process. Simultaneously, we have demonstrated the quantized switching phenomena at ultra-cryogenic temperature (4 K), which are attributed to the atomic-level reaction in metallic filament. (C) 2013 AIP Publishing LLC.|
|期刊:||APPLIED PHYSICS LETTERS|
|Appears in Collections:||Articles|
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