標題: Band alignment tuning of InAs quantum dots with a thin AlGaAsSb capping layer
作者: Liao, Yu-An
Hsu, Wei-Ting
Huang, Shih-Han
Chiu, Pei-Chin
Chyi, Jen-Inn
Chang, Wen-Hao
電子物理學系
Department of Electrophysics
公開日期: 29-Apr-2013
摘要: We investigate the optical properties of InAs quantum dots (QDs) capped with a thin AlxGa1-xAsSb layer. As evidenced from power-dependent and time-resolved photoluminescence (PL) measurements, the GaAsSb-capped QDs with type-II band alignment can be changed to type-I by adding Al into the GaAsSb capping layer. The evolution of band alignment with the Al content in the AlGaAsSb capping layer has also been confirmed by theoretical calculations based on 8-band k . p model. The PL thermal stability and the room temperature PL efficiency are also improved by AlGaAsSb capping. We demonstrate that using the quaternary AlGaAsSb can take the advantages of GaAsSb capping layer on the InAs QDs while retaining a type-I band alignment for applications in long-wavelength light emitters. (C) 2013 AIP Publishing LLC.
URI: http://dx.doi.org/10.1063/1.4803013
http://hdl.handle.net/11536/21922
ISSN: 0003-6951
DOI: 10.1063/1.4803013
期刊: APPLIED PHYSICS LETTERS
Volume: 102
Issue: 17
結束頁: 
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