標題: Origin of Hopping Conduction in Graphene-Oxide-Doped Silicon Oxide Resistance Random Access Memory Devices
作者: Chang, Kuan-Chang
Zhang, Rui
Chang, Ting-Chang
Tsai, Tsung-Ming
Lou, J. C.
Chen, Jung-Hui
Young, Tai-Fa
Chen, Min-Chen
Yang, Ya-Liang
Pan, Yin-Chih
Chang, Geng-Wei
Chu, Tian-Jian
Shih, Chih-Cheng
Chen, Jian-Yu
Pan, Chih-Hung
Su, Yu-Ting
Syu, Yong-En
Tai, Ya-Hsiang
Sze, Simon M.
電子工程學系及電子研究所
光電工程學系
Department of Electronics Engineering and Institute of Electronics
Department of Photonics
關鍵字: conduction;graphene oxide;hopping;redox reaction;resistance random access memory (RRAM)
公開日期: 1-五月-2013
摘要: In this letter, a double-active-layer (Zr:SiOx/C:SiOx) resistive switching memory device with a high ON/OFF resistance ratio and small working current (0.02 mA), is presented. Through the analysis of Raman and Fourier transform infrared spectroscopy spectra, we find that graphene oxide exists in the C:SiOx layer. It can be observed that Zr:SiOx/C: SiOx structure has superior switching performance and higher stability compared with the single-active-layer (Zr:SiOx) structure, which is attributed to the existence of graphene oxide flakes formed during the sputter process. I-V characteristics under a series of increasing temperature were analyzed to testify the carrier hopping distance variation, which is further verified by our graphene oxide redox reaction model.
URI: http://dx.doi.org/10.1109/LED.2013.2250899
http://hdl.handle.net/11536/21910
ISSN: 0741-3106
DOI: 10.1109/LED.2013.2250899
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 34
Issue: 5
起始頁: 677
結束頁: 679
顯示於類別:期刊論文


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  1. 000318433400035.pdf