標題: Hopping Effect of Hydrogen-Doped Silicon Oxide Insert RRAM by Supercritical CO2 Fluid Treatment
作者: Chang, Kuan-Chang
Pan, Chih-Hung
Chang, Ting-Chang
Tsai, Tsung-Ming
Zhang, Rui
Lou, Jen-Chung
Young, Tai-Fa
Chen, Jung-Hui
Shih, Chih-Cheng
Chu, Tian-Jian
Chen, Jian-Yu
Su, Yu-Ting
Jiang, Jhao-Ping
Chen, Kai-Huang
Huang, Hui-Chun
Syu, Yong-En
Gan, Der-Shin
Sze, Simon M.
電子工程學系及電子研究所
Department of Electronics Engineering and Institute of Electronics
關鍵字: Hopping conduction;resistive random access memory (RRAM);supercritical fluid
公開日期: 1-五月-2013
摘要: In this letter, we introduced hydrogen ions into titanium metal doped into SiO2 thin film as the insulator of resistive random access memory (RRAM) by supercritical carbon dioxide (SCCO)(2) fluid treatment. After treatment, low resistance state split in to two states, we find the insert RRAM, which means it has an operating polarity opposite from normal RRAM. The difference of the insert RRAM is owing to the resistive switching dominated by hydrogen ions, dissociated from OH bond, which was not by oxygen ions as usual. The current conduction mechanism of insert RRAM was hopping conduction due to the metal titanium reduction reaction through SCCO2.
URI: http://dx.doi.org/10.1109/LED.2013.2251995
http://hdl.handle.net/11536/21906
ISSN: 0741-3106
DOI: 10.1109/LED.2013.2251995
期刊: IEEE ELECTRON DEVICE LETTERS
Volume: 34
Issue: 5
起始頁: 617
結束頁: 619
顯示於類別:期刊論文


文件中的檔案:

  1. 000318433400015.pdf