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dc.contributor.authorLu, Kuo-Changen_US
dc.contributor.authorWu, Wen-Weien_US
dc.contributor.authorOuyang, Haoen_US
dc.contributor.authorLin, Yung-Chenen_US
dc.contributor.authorHuang, Yuen_US
dc.contributor.authorWang, Chun-Wenen_US
dc.contributor.authorWu, Zheng-Weien_US
dc.contributor.authorHuang, Chun-Weien_US
dc.contributor.authorChen, Lih J.en_US
dc.contributor.authorTu, K. N.en_US
dc.date.accessioned2014-12-08T15:30:40Z-
dc.date.available2014-12-08T15:30:40Z-
dc.date.issued2011-07-01en_US
dc.identifier.issn1530-6984en_US
dc.identifier.urihttp://dx.doi.org/10.1021/nl201037men_US
dc.identifier.urihttp://hdl.handle.net/11536/21903-
dc.description.abstractWe report the critical effects of oxide on the growth of nanostructures through silicide formation. Under an in situ ultrahigh vacuum transmission electron microscope, it is observed from the conversion of Si nanowires into the metallic PtSi grains epitaxially through controlled reactions between lithographically defined Pt pads and Si nanowires. With oxide, instead of contact area, single crystal PtSi grains start forming either near the center between two adjacent pads or from the ends of Si nanowires, resulting in the heterostructure formation of Si/PtSi/Si. Without oxide, transformation from Si into PtSi begins at the contact area between them, resulting in the heterostructure formation of PtSi/Si/PtSi. The nanowire heterostructures have an atomically sharp interface with epitaxial relationships of Si(20-2)//PtSi(10-1) and Si[111]//PtSi[111]. Additionally, it has been observed that; the existence of oxide significantly affects not only the growth position but also the growth behavior and the growth rate by two orders of magnitude. Molecular dynamics simulations have been performed to support our experimental results and the proposed growth mechanisms. In addition to fundamental science, the significance of the study matters for future processing techniques in nanotechnology and related applications as well.en_US
dc.language.isoen_USen_US
dc.subjectSurface oxideen_US
dc.subjectsilicide nanowiresen_US
dc.subjectnanokineticsen_US
dc.subjectnanoheterostructuresen_US
dc.subjectin situ TEMen_US
dc.subjectmolecular dynamics simulationsen_US
dc.titleThe Influence of Surface Oxide on the Growth of Metal/Semiconductor Nanowiresen_US
dc.typeArticleen_US
dc.identifier.doi10.1021/nl201037men_US
dc.identifier.journalNANO LETTERSen_US
dc.citation.volume11en_US
dc.citation.issue7en_US
dc.citation.spage2753en_US
dc.citation.epage2758en_US
dc.contributor.department材料科學與工程學系zh_TW
dc.contributor.departmentDepartment of Materials Science and Engineeringen_US
dc.identifier.wosnumberWOS:000292849400032-
dc.citation.woscount9-
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